PART NUMBER NE25139
PACKAGE OUTLINE 39
SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure at VDS = 5 V, VG2S
= 1 V, I
D
= 10 mA,
f = 900 MHz dB 1.1 2.5
GPS
Power Gain at VDS = 5 V, VG2S
= 1 V, I
D = 10 mA,
f = 900 MHz dB 16 20
BVDSX
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S
= 0, I
D = 10 μAV13
IDSS
Saturated Drain Current at VDS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V mA 5 20 40
VG1S (OFF)
Gate 1 to Source Cutoff Voltage at VDS
= 5 V,
VG2S = 0 V, ID
= 100
μA V -3.5
VG2S (OFF)
Gate 2 to Source Cutoff Voltage at VDS
= 5 V,
VG1S
= 0 V, I
D
= 100
μA V -3.5
IG1SS
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S
= 0
μA10
IG2SS
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
μA10
|YFS| Forward Transfer Admittance at VDS = 5 V, VG2S
= 1 V,
ID
= 10 mA, f = 1.0 kHz mS 18 25 35
CISS
Input Capacitance at VDS = 5 V, VG2S
= 1 V, I
D
= 10 mA,
f = 1 MHz pF 0.5 1.0 1.5
CRSS
Reverse Transfer Capacitance at VDS
= 5 V, V
G2S
= 1 V,
ID
= 10 mA, f = 1 MHz pF 0.02 0.03
FEATURES
? SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
? LOW CRSS:
0.02 pF (TYP)
? HIGH GPS: 20 dB (TYP) AT 900 MHz
? LOW NF: 1.1 dB TYP AT 900 MHz
? LG1
= 1.0
μm, LG2
= 1.5
μm, WG
= 400
μm
ID = 10 mA
5
? ION IMPLANTATION
? AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, VDS
(V)
Noise Figure, NF (dB
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
GPS
VG2S
= 1 V
VG2S = 0.5 V
VG2S = 2 V
f = 900 MHz
NF
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